High Resolution Analytical Scanning Electron Microscope:
from Nano-imaging to Chemical and Structural Analyses
ZEISS 1550VP Field Emission SEM - Oxford EDS - HKL EBSD |
Instruments
ZEISS 1550VP FESEM, equipped with in-lens SE, below-lens SE, variable pressure SE, BSE detectors
Oxford X-Max SDD X-ray Energy Dispersive Spectrometer (EDS) system
HKL Electron Back Scatter Diffraction (EBSD) system, including a Forward Scatter Electron (FSE) detector
Imaging capabilities
High resolution secondary electron imaging with In-Lens detector (spec: 1 nm at 20kV)
Low voltage imaging (200 V - 5 kV) - better surface imaging due to reduced beam penetration
Compositional contrast imaging - BSE
Orientation contrast imaging - FSE
Variable pressure secondary electron imaging (3 Pa - 100 Pa)
Cathodoluminescence (CL) imaging
STEM imaging of TEM specimens
Chemical analysis - EDS
X-ray detector capable of detecting Be to U
Quantitative elemental analysis with a relative accuracy of better than 5% and detection limit of better than 0.5% can be readily obtained
X-ray mapping
Structural analysis - EBSD
Orientation mapping - texture analysis
Phase identification at sub-micron scale
Image Album
High resolution
image revealing nano-crystals covering up Fe oxide
particle. (c) Chi Ma
Low voltage SE image
(obtaining at 300 V) showing surface details of kaolinite plates.
(c) Chi Ma
Cathodoluminescence (CL) image of benitoite. (c) Chi Ma
STEM image of borosilicate fibers. (c) Chi Ma
Electron backscatter diffraction pattern of silicon.